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HiPerFETTM Power MOSFETs Q-Class
N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt
Preliminary data sheet
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL Md Weight 50/60 Hz, RMS IISOL 1 mA t = 1 min t=1s IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150C, RG = 2 TC = 25C Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C
IXFN 73N30Q
VDSS ID25
RDS(on)
= 300 V = 73 A = 42 m
trr 250 ns
Maximum Ratings 300 300 20 30 73 292 73 60 2.5 5 500 -55 to +150 150 -55 to +150 2500 3000 1.5/13 1.5/13 30 V V
miniBLOC, SOT-227 B (IXFN) E153432
S G
V V A A A mJ J V/ns W C C C V~ V~ Nm/lb.in. Nm/lb.in. g Features * IXYS advanced low Qg process * Low gate charge and capacitances - easier to drive -faster switching * Unclamped Inductive Switching (UIS) rated * Low RDS (on) * Fast intrinsic diode * International standard package * miniBLOC with Aluminium nitride isolation for low thermal resistance * Low terminal inductance (<10 nH) and stray capacitance to heatsink (<35pf) * Molding epoxies meet UL 94 V-0 flammability classification Applications * DC-DC converters * Battery chargers * Switched-mode and resonant-mode power supplies * DC choppers * Temperature and lighting controls Advantages * Easy to mount * Space savings * High power density G = Gate S = Source
S D
D = Drain
Either Source terminal at miniBLOC can be used as Main or Kelvin Source
Mounting torque Terminal connection torque
Symbol
Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 300 2.0 4.0 100 TJ = 25C TJ = 125C 100 2 42 V V nA A mA m
VDSS VGS(th) IGSS IDSS RDS(on)
VGS = 0 V, ID = 1 mA VDS = VGS, ID = 4 mA VGS = 20 VDC, VDS = 0 VDS = VDSS VGS = 0 V
VGS = 10 V, ID = 0.5 ID25 Pulse test, t 300 s, duty cycle d 2 %
(c) 2001 IXYS All rights reserved
98742A (12/01)
IXFN 73N30Q
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 30 47 6400 VGS = 0 V, VDS = 25 V, f = 1 MHz 1340 340 37 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 1.0 (External), 36 82 12 190 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 51 78 0.26 0.05 S pF pF pF ns ns ns ns nC nC nC K/W K/W
M4 screws (4x) supplied
Dim. A B C D E F G H J K L M Millimeter Min. Max. 31.50 7.80 4.09 4.09 4.09 14.91 30.12 38.00 11.68 8.92 0.76 12.60 25.15 1.98 4.95 26.54 3.94 4.72 24.59 -0.05 31.88 8.20 4.29 4.29 4.29 15.11 30.30 38.23 12.22 9.60 0.84 12.85 25.42 2.13 5.97 26.90 4.42 4.85 25.07 0.1 Inches Min. 1.240 0.307 0.161 0.161 0.161 0.587 1.186 1.496 0.460 0.351 0.030 0.496 0.990 0.078 0.195 1.045 0.155 0.186 0.968 -0.002 Max. 1.255 0.323 0.169 0.169 0.169 0.595 1.193 1.505 0.481 0.378 0.033 0.506 1.001 0.084 0.235 1.059 0.174 0.191 0.987 0.004
miniBLOC, SOT-227 B
gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK
VDS = 10 V; ID = 0.5 * ID25, pulse test
Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM Test Conditions VGS = 0 V
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 73 292 1.5 A A V
N O P Q R S T U
Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = 25A, -di/dt = 100 A/s, VR = 100 V 0.8 7
250
ns C A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025

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